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学术报告:碳纳米管光电探测与集成技术 Carbon Nanotube Photodetection and Integration Technology

信息来源:深圳大学微纳光电子学研究院 发布日期:2024-03-25

报告人:王颖 副教授(北京交通大学)

邀请人:张文静教授

时 间:2024年03月29日14:00

沧海校区致腾楼223会议室

报告人简介

王颖,博士,北京交通大学副教授,北京大学重庆碳基集成电路研究院兼职研究员。主要研究方向为碳基光电传感与集成技术,在ACS Nano、AFM等杂志发表多篇学术论文,主持科技委重大项目、国家自然科学基金集成项目课题、基础加强计划等国家级项目。

报告摘要:

碳基光电探测与集成技术,主要发展面向国防、人工智能等场景的多功能光电融合芯片,为未来光电信息器件技术发展提供选择方案。基于高性能碳纳米管电子器件无掺杂、低温制备的技术优势和“光”-“电”解耦的架构设计,我们研发了原创的碳基HGFET探测技术,已经实现灵敏度超过商用铟镓砷红外探测器10倍以上,并能够与硅基CMOS电路单片集成,突破传统倒焊技术的集成瓶颈;此外,研发了面向感算一体架构的碳基智能传感技术,推动光电计算在边缘AI的应用。

Carbon-Based Optoelectronic Detection and Integration Technology focuses on the development of multifunctional optoelectronic fusion chips for scenarios such as national defense and artificial intelligence (AI). It provides alternative solutions for the future development of optoelectronic information device technology. Leveraging the technical advantages of high-performance carbon nanotubes (CNTs) electronic devices, which are free of doping and prepared at low temperatures, along with the architecture design of “opto-electric decoupling”, we have developed an original CNTs-based HGFET (heterojunction-gate field-effect transistor) detection technology. This technology has achieved sensitivities over 10 times greater than commercial indium gallium arsenide infrared detectors and can be monolithically integrated with silicon-based CMOS circuits, breaking through the integration bottleneck of traditional flip-chip technology. Additionally, we have developed CNTs-based intelligent sensing technology for integrated computing architectures, promoting the application of optoelectronic computing in edge AI.

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